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FQP6N90C

Fairchild Semiconductor
Part Number FQP6N90C
Manufacturer Fairchild Semiconductor
Description 900V N-Channel MOSFET
Published Aug 20, 2014
Detailed Description FQP6N90C/FQPF6N90C QFET FQP6N90C/FQPF6N90C 900V N-Channel MOSFET General Description These N-Channel enhancement mode p...
Datasheet PDF File FQP6N90C PDF File

FQP6N90C
FQP6N90C

Overview
FQP6N90C/FQPF6N90C QFET FQP6N90C/FQPF6N90C 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supplies.
TM Features • • • • • • 6A, 900V, RDS(on) = 2.
3Ω @VGS = 10 V Low gate charge ( typical 30 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! ● ◀ ▲ ...


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