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BUK626R2-40C

NXP Semiconductors
Part Number BUK626R2-40C
Manufacturer NXP Semiconductors
Description N-channel TrenchMOS intermediate level FET
Published Aug 19, 2014
Detailed Description DP AK BUK626R2-40C N-channel TrenchMOS intermediate level FET Rev. 1 — 12 July 2011 Product data sheet 1. Product prof...
Datasheet PDF File BUK626R2-40C PDF File

BUK626R2-40C
BUK626R2-40C

Overview
DP AK BUK626R2-40C N-channel TrenchMOS intermediate level FET Rev.
1 — 12 July 2011 Product data sheet 1.
Product profile 1.
1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology.
This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.
1.
2 Features and benefits  AEC Q101 compliant  Suitable for standard and logic level gate drive sources  Suitable for thermally demanding environments due to 175 °C rating 1.
3 Applications  12 V Automotive systems  Electric and electro-hydraulic power steering  Mo...


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