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PMDPB38UNE

Part Number	PMDPB38UNE
Manufacturer	NXP Semiconductors
Description	20V dual N-channel Trench MOSFET
Published	Aug 16, 2014
Detailed Description	PMDPB38UNE 26 September 2012 20 V dual N-channel Trench MOSFET Product data sheet 1. Product profile 1.1 General desc...
Datasheet	PMDPB38UNE PDF File

Overview

PMDPB38UNE 26 September 2012 20 V dual N-channel Trench MOSFET Product data sheet 1.
Product profile 1.
1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.
2 Features and benefits • Very fast switching • Trench MOSFET technology • Leadless medium power SMD plastic package: 2 × 2 × 0.
6 mm • Exposed drain pad for excellent thermal conduction • ESD protection up to 1.
6 kV 1.
3 Applications • Charging switch for portable devices • DC-to-DC converters • Small brushless DC motor drive • Power management in battery-driven portables • Hard di...

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PMDPB38UNE 20V dual N-channel Trench MOSFET - NXP Semiconductors

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