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PMDPB28UN

Part Number	PMDPB28UN
Manufacturer	NXP Semiconductors
Description	dual N-channel Trench MOSFET
Published	Aug 16, 2014
Detailed Description	PMDPB28UN 20 V, dual N-channel Trench MOSFET Rev. 1 — 26 April 2012 Product data sheet 1. Product profile 1.1 General d...
Datasheet	PMDPB28UN PDF File

Overview

PMDPB28UN 20 V, dual N-channel Trench MOSFET Rev.
1 — 26 April 2012 Product data sheet 1.
Product profile 1.
1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.
2 Features and benefits  Very fast switching  Trench MOSFET technology  Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.
65 mm  Exposed drain pad for excellent thermal conduction 1.
3 Applications  Charging switch for portable devices  DC-to-DC converters  Small brushless DC motor drive  Power management in battery-driven portables  Hard disc and co...

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PMDPB28UN dual N-channel Trench MOSFET - NXP Semiconductors

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