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PMDPB58UPE

Part Number	PMDPB58UPE
Manufacturer	NXP Semiconductors
Description	20V dual P-channel Trench MOSFET
Published	Aug 16, 2014
Detailed Description	PMDPB58UPE 020 -6 20 V dual P-channel Trench MOSFET Rev. 1 — 19 June 2012 Product data sheet 1. Product profile 1.1 Ge...
Datasheet	PMDPB58UPE PDF File

Overview

PMDPB58UPE 020 -6 20 V dual P-channel Trench MOSFET Rev.
1 — 19 June 2012 Product data sheet 1.
Product profile 1.
1 General description Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
DF N2 1.
2 Features and benefits  Low threshold voltage  Very fast switching  Trench MOSFET technology  2 kV ElectroStatic Discharge (ESD) protection 1.
3 Applications  Relay driver  High-speed line driver  High-side load switch  Switching circuits 1.
4 Quick reference data Table 1.
Symbol Per transistor VDS VGS ID RDSon drain-source voltage gate-sour...

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