DatasheetsPDF.com

BTA416Y-800C

NXP
Part Number BTA416Y-800C
Manufacturer NXP
Description 3Q Hi-Com Triac
Published Aug 4, 2014
Detailed Description BTA416Y-800C 3Q Hi-Com Triac 10 June 2014 Product data sheet 1. General description Planar passivated high commutation ...
Datasheet PDF File BTA416Y-800C PDF File

BTA416Y-800C
BTA416Y-800C


Overview
BTA416Y-800C 3Q Hi-Com Triac 10 June 2014 Product data sheet 1.
General description Planar passivated high commutation three quadrant triac in a SOT78D (TO-220AB) internally insulated plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur.
This "series C" triac will commutate the full RMS current at the maximum rated junction temperature without the aid of a snubber.
This device has high Tj operating capability and an internally isolated mounting base.
2.
Features and benefits • • • • • • • • • 3Q technology for improved noise immunity High commutation capability with maximum false trigger immunity High immunity to false turn-on by dV/dt High surge capability High Tj(max) Isolated mounting base with 2500 V (RMS) isolation Less sensitive gate for high noise immunity Planar passivated for voltage ruggedness and reliability Triggering in three quadrants only 3.
Applications • • • Electronic thermostats (heating and cooling) High power motor controls Rectifier-fed DC inductive loads e.
g.
DC motors and solenoids 4.
Quick reference data Table 1.
Symbol VDRM ITSM Tj IT(RMS) Quick reference data Parameter repetitive peak offstate voltage non-repetitive peak on- full sine wave; Tj(init) = 25 °C; state current tp = 20 ms; Fig.
4; Fig.
5 junction temperature RMS on-state current full sine wave; Tmb ≤ 108 °C; Fig.
1; Fig.
2; Fig.
3 Conditions Min Typ Max 800 160 150 16 Unit V A °C A Scan or click this QR code to view the latest information for this product TO -2 20A B NXP Semiconductors BTA416Y-800C 3Q Hi-Com Triac Symbol IGT Parameter gate trigger current Conditions VD = 12 V; IT = 0.
1 A; T2+ G+; Tj = 25 °C; Fig.
7 VD = 12 V; IT = 0.
1 A; T2+ G-; Tj = 25 °C; Fig.
7 VD = 12 V; IT = 0.
1 A; T2- G-; Tj = 25 °C; Fig.
7 Min 2 2 2 Typ - Max 35 35 35 Unit mA mA mA Static characteristics 5.
Pinning information Table 2.
Pin 1 2 3 mb Pinning information Symbol Description T1 T2 G n.
c.
main terminal 1 main terminal 2 gat...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)