2SC1984L - Secos
Description
2SC1383L/2SC1384L
Elektronische Bauelemente
RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free
4.
9±0.
2
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NPN Silicon
General Purpose Transistor
TO-92L
3 .
9 ±0.
2
FEATURE Power dissipation
2.
0 +0.
3 –0.
2 14 ±0.
2
1 0.
45 +0.
–0.
1 05 0.
4 0 +0.
–0.
05
PCM: Collector current ICM:
1 W (Tamb=25℃) 1 A
1.
0±0.
1
Collector-base voltage V(BR)CBO: 2SC1383L: 30 V 2SC1384L: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃
(1.
27 Typ.
) 1.
4 +0.
R2 –0.
2 1 2 3 2.
54 ±0.
1
8.
0±0.
2
1: Emitter 2: Collector 3: Base
Unit: mm
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter Collector-base breakdown voltage 2SC1383L 2SC1384L Collector-emitter breakdown voltage 2SC1383L 2SC1384L Emitter-base breakdown voltage Collector cut-off current
unless
Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE(1)
otherwise
Test
specified)
MIN 30 60 25 50 5 0.
1 85 50 0.
4 1.
2 100 V V MHz 340 MAX UNIT V V V µA
conditions
Ic= 10µA , IE=0 IC=2mA , IB=0
IE= 10µA, IC=0 VCB=20V , VCE=10 V, VCE=5 V, IE=0
IC= 500mA IC= 1A
DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency VCE(sat) VBE(sat)
IC= 500m A, IB=50mA IC= 500mA , IB= 50mA
fT
VCE= 10 V, IC= 50mA
CLASSIFICATION OF hFE(1)
Rank Range Q 85-170 R 120-240 S 170-340
http://www.
SeCoSGmbH.
com/
01-Jun-2002 Rev.
A
Any changing of specification will not be informed individual
Page 1 of 3
2SC1383L/2SC1384L
Elektronische Bauelemente
NPN Silicon
www.
DataSheet4U.
com
General Purpose Transistor
PC Ta
1.
2
1.
50
IC VCE
Ta = 25°C IB = 10 mA 9 mA 8 mA 7 mA 6 mA 5 mA 4 mA
0.
50
IC I B
1.
2 VCE = 10 V Ta = 25°C 1.
0
Collector power dissipation PC (W)
1.
0
1.
25
Collector current IC (A)
0.
8
1.
00
Collector current IC (A)
0.
8
0.
6
0.
75
0.
6
0.
4
3 mA 2 mA
0.
4
0.
2
0.
25
1 mA
0.
2
0
0
0
40
80
120
160
0
2
4
6
8
10
0
0
2
4
6
8
10
12
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Base current IB (...
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