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G20N100D2

Intersil Corporation
Part Number G20N100D2
Manufacturer Intersil Corporation
Description HGTG20N100D2
Published Jul 11, 2014
Detailed Description HGTG20N100D2 May 1995 20A, 1000V N-Channel IGBT Package JEDEC STYLE TO-247 EMITTER COLLECTOR GATE Features • 34A, 1000...
Datasheet PDF File G20N100D2 PDF File

G20N100D2
G20N100D2

Overview
HGTG20N100D2 May 1995 20A, 1000V N-Channel IGBT Package JEDEC STYLE TO-247 EMITTER COLLECTOR GATE Features • 34A, 1000V • Latch Free Operation • Typical Fall Time 520ns • High Input Impedance • Low Conduction Loss Description The HGTG20N100D2 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors.
The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The much lower on-state voltage drop varies only moderately between +25oC and +150oC.
IGBTs are ideal for many high voltage switching applications operating at frequencies where low conduction losses are essential, such as: AC and ...


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