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TSC5802D

Taiwan Semiconductor
Part Number TSC5802D
Manufacturer Taiwan Semiconductor
Description High Voltage Fast-Switching NPN Power Transistor
Published Jul 10, 2014
Detailed Description TSC5802D High Voltage Fast-Switching NPN Power Transistor TO-251 (IPAK) TO-252 (DPAK) Pin Definition: 1. Base 2. Collect...
Datasheet PDF File TSC5802D PDF File

TSC5802D
TSC5802D


Overview
TSC5802D High Voltage Fast-Switching NPN Power Transistor TO-251 (IPAK) TO-252 (DPAK) Pin Definition: 1.
Base 2.
Collector 3.
Emitter PRODUCT SUMMARY BVCEO BVCBO IC VCE(SAT) 450V 1050V 2A 0.
5V @ IC=0.
7A, IB=0.
14A Features ● ● High Voltage Capability High Switching Speed Block Diagram Structure ● ● Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No.
TSC5802DCH C5G TSC5802DCP ROG Package TO-251 TO-252 Packing 75pcs / Tube 2.
5Kpcs / 13” Reel Note: “G” denote for Halogen Free Product Absolute Maximum Rating (TA = 25oC, unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage @ VBE=0V Emitter-Base Voltage Collector Current Collector Peak Current (tp <5ms) Base Current Base Peak Current (tp <5ms) Power Total Dissipation @ Tc=25ºC Maximum Operating Junction Temperature Storage Temperature Range Note: Single Pulse.
PW = 300uS, Duty ≤2% Symbol VCBO VCES VEBO IC ICM IB IBM PDTOT TJ TSTG Limit 1050 450 15 2 4 1.
5 3 30 +150 -55 to ...



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