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TSC10CT

Taiwan Semiconductor
Part Number TSC10CT
Manufacturer Taiwan Semiconductor
Description High Voltage NPN Transistor
Published Jul 10, 2014
Detailed Description Preliminary TSC10 High Voltage NPN Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY ...
Datasheet PDF File TSC10CT PDF File

TSC10CT
TSC10CT


Overview
Preliminary TSC10 High Voltage NPN Transistor TO-92 Pin Definition: 1.
Emitter 2.
Collector 3.
Base PRODUCT SUMMARY BVCEO BVCBO IC VCE(SAT) 500V 980V 1.
5A 0.
5V @ IC / IB = 0.
5A / 0.
1A Features ● ● High Voltage High Speed Switching Block Diagram Structure ● ● Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No.
TSC10CT B0 TSC10CT B0G TSC10CT A3 TSC10CT A3G Package TO-92 TO-92 TO-92 TO-92 Packing 1Kpcs / Bulk 1Kpcs / Bulk 2Kpcs / Ammo 2Kpcs / Ammo Note: “G” denote for Halogen Free Product Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TC=25ºC Operating Junction Temperature Operating Junction and Storage Temperature Range DC Pulse Symbol VCBO VCEO VEBO IC PDTOT TJ TSTG Limit 980 500 10 1.
5 3 1.
96 +150 - 55 to +150 Unit V V V A W o o C C Thermal Performance Parameter Thermal Resistance Junction to Ambient Thermal Resistance Junction to Case Symbol RӨJA RӨJC Limit 215 65 Unit o o C/W C/W 1/4 Version: Preliminary Preliminary TSC10 High Voltage NPN Transistor Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Static Collector-Base Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage IC =1mA, IB =0 IC =10mA, IE =0 IE =1mA, IC =0 VCES =980V, IE =0 VEB 9V, IC =0 IC / IB = 0.
5A / 0.
1A IC / IB = 1.
0A / 0.
25A IC / IB = 1.
5A / 0.
5A Base-Emitter Saturation Voltage IC / IB = 0.
5A / 0.
1A IC / IB = 1.
0A / 0.
25A VCE = 10V, IC = 10mA DC Current Gain Dynamic Characteristics Frequency Output Capacitance Delay Time Rise Time Storage Time Fall Time VCE = 10V, IC = 0.
1A VCB = 10V, f = 0.
1MHz VCC = 125V, IC = 1A, IB1 = IB2 = 0.
2A, tp = 25uS Duty Cycle ≤1% fT Cob td tr tSTG tf 4 ------21 0.
05 1.
1 2 0.
4 --0.
2 -4 0.
7 MHz pF uS uS uS uS VCE = 10V, IC = 400mA VCE = 10V, IC = 1A hFE BV...


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