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K1529

Toshiba Semiconductor
Part Number K1529
Manufacturer Toshiba Semiconductor
Description 2SK1529
Published Jul 8, 2014
Detailed Description 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High Power Amplifier Application l High brea...
Datasheet PDF File K1529 PDF File

K1529
K1529

Overview
2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High Power Amplifier Application l High breakdown voltage l High forward transfer admittance l Complementary to 2SJ200 : VDSS = 180V : |Yfs| = 4.
0 S (typ.
) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Gate−source voltage Drain current (Note 1) Symbol VDSS VGSS ID PD Tc Tstg Rating 180 ±20 10 120 150 −55~150 Unit V V A W °C °C 1.
GATE 2.
DRAIN (HEAT SINK) 3.
SOURCE Drain power dissipation (Tc = 25°C) Channel temperature Storage temperature range Marking Type ※ Lot Number Month (starting from alphabet A) Year (last number of the christian era) JEDEC JEITA TOSHIBA ― ― 2-16C1B K1529 ※ ...


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