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K12A60D

Toshiba Semiconductor
Part Number K12A60D
Manufacturer Toshiba Semiconductor
Description TK12A60D
Published Jul 8, 2014
Detailed Description TK12A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK12A60D Switching Regulator Applications ...
Datasheet PDF File K12A60D PDF File

K12A60D
K12A60D

Overview
TK12A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK12A60D Switching Regulator Applications Ф3.
2 ± 0.
2 10 ± 0.
3 Unit: mm 2.
7 ± 0.
2 A 3.
9 3.
0 1.
14 ± 0.
15 2.
8 MAX.
2.
54 1 2 3 2.
6 ± 0.
1 0.
69 ± 0.
15 Ф0.
2 M A • • • • Low drain-source ON resistance: RDS (ON) = 0.
45 Ω (typ.
) High forward transfer admittance: ⎪Yfs⎪ = 7.
5 S (typ.
) Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) Enhancement-mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 ±30 12 48 45 359 12 4.
5 150 −55 to ...


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