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IRFBC40

Part Number	IRFBC40
Manufacturer	Fairchild Semiconductor
Description	N-Channel Power MOSFET
Published	Jul 7, 2014
Detailed Description	IRFBC40 Data Sheet January 2002 6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon g...
Datasheet	IRFBC40 PDF File

Overview

IRFBC40 Data Sheet January 2002 6.
2A, 600V, 1.
200 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power ﬁeld effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation.
All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated circuits.
Formerly developmental type TA17426.
Features • 6.
2A, 600V • rDS(ON) = 1.
200Ω • Single Pulse ...

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