N-Channel Vertical DMOS FET - Supertex Inc
Description
Supertex inc.
VN0109
N-Channel Enhancement-Mode Vertical DMOS FET
Features
►► Free from secondary breakdown ►► Low power drive requirement ►► Ease of paralleling ►► Low CISS and fast switching speeds ►► Excellent thermal stability ►► Integral source-drain diode ►► High input impedance and high gain
Applications
►► Motor controls ►► Converters ►► Amplifiers ►► Switches ►► Power supply circuits ►► Drivers (relays, hammers, solenoids, lamps, memories,
displays, bipolar transistors, etc.
)
General Description
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process.
This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Ordering Information
Part Number
Package Option
VN0109N3-G
TO-92
VN0109N3-G P002
VN0109N3-G P003
VN0109N3-G P005 TO-92
VN0109N3-G P013
VN0109N3-G P014
-G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
Packing 1000/Bag
2000/Reel
Absolute Maximum Ratings
Product Summary
BVDSS/BVDGS
RDS(ON)
(max)
90V
3.
0Ω
Pin Configuration
SOURCE
DRAIN
IDSS
(min)
2.
0A
Parameter
Value
Drain-to-source voltage Drain-to-gate voltage Gate-to-source voltage
BVDSS BVDGS ±20V
Operating and storage temperature
-55OC to +150OC
Absolute Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation under these conditions is not...
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