N-CHANNEL MOSFET - JILIN SINO-MICROELECTRONICS
Description
R
N N-CHANNEL MOSFET
JCS640
MAIN CHARACTERISTICS
Package
ID VDSS Rdson （@Vgs=10V） Qg
z z z UPS
18.
0 A 200 V 0.
18Ω 47 nC
APPLICATIONS
z High efficiency switch
mode power supplies z Electronic lamp ballasts based on half bridge z UPS FEATURES z Low gate charge z Low Crss (typical 48pF ) z Fast switching z 100% avalanche tested z Improved dv/dt capability z RoHS product
z z Crss ( 48pF) z z z dv/dt z RoHS
ORDER MESSAGE
Order codes JCS640C-O-C-N-B JCS640F-O-F-N-B Halogen Free NO NO Device Weight 2.
15 g(typ) 2.
20 g(typ) Marking JCS640C JCS640F Package TO-220C TO-220MF Packaging Tube Tube
：201007A
1/10
R
JCS640
ABSOLUTE RATINGS (Tc=25℃)
JCS640C 200 18 11.
4 18* 11.
4* JCS640F Value Unit V A A
Parameter － Drain-Source Voltage Drain Current
Symbol VDSS ID T=25℃ T=100℃ IDM
-continuous
（ 1） Drain Current - pulse （note 1） Gate-Source Voltage （ 2） Single Pulsed Avalanche Energy（note 2） （ 1） Avalanche Current（note 1） （ 1） Repetitive Avalanche Current （note 1） （ 3） Peak Diode Recovery dv/dt （note 3）
72
72*
A
VGSS
±30
V
EAS
259
mJ
IAR
18
A
EAR
14
mJ
dv/dt
5.
5
V/ns
Power Dissipation
PD TC=25℃ -Derate above 25℃ TJ，TSTG
140
44
W
1.
12
0.
35
W/℃
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes
-55～+150
℃
TL
300
℃
* *Drain current limited by maximum junction temperature
：201007A
2/10
R
JCS640
Tests conditions Min Typ Max Units Parameter Symbol
ELECTRICAL CHARACTERISTICS
Off –Characteristics － Drain-Source Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-body leakage current, forward Gate-body leakage current, reverse On-Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input capacitance Output capacitance Reverse transfer capacitance VGS(th) VDS = VGS , ID=250μA 2.
0 4.
0 V BVDSS ID=250μA, VGS=0V 200 V
ΔBVDSS/Δ ID=250μA, referenced to 25℃ TJ V...
Similar Datasheet
