Power-Transistor - Infineon Technologies
Description
OptiMOS® Power-Transistor
Features • N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature • Green package (lead free)
PG-TO263-3-2
• Ultra low Rds(on)
• 100% Avalanche tested
IPB80N08S2-07 IPP80N08S2-07, IPI80N08S2-07
Product Summary V DS R DS(on),max (SMD version) ID
75 V 7.
1 mΩ 80 A
PG-TO220-3-1
PG-TO262-3-1
Type IPB80N08S2-07 IPP80N08S2-07 IPI80N08S2-07
Package PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1
Ordering Code Marking SP0002-19048 2N0807 SP0002-19040 2N0807 SP0002-19043 2N0807
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
ID
T C=25 °C, V GS=10 V
T C=100 °C, V GS=10 V2)
Pulsed drain current2) Avalanche energy, single pulse2) Gate source voltage4)
I D,pulse E AS V GS
T C=25 °C I D=80A
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
Unit
80
A
80
320
810
mJ
±20
V
300
W
-55 .
.
.
+175
°C
55/175/56
Rev.
1.
0
page 1
2006-03-03
IPB80N08S2-07 IPP80N08S2-07, IPI80N08S2-07
Parameter
Symbol
Conditions
min.
Values typ.
Unit max.
Thermal characteristics2)
Thermal resistance, junction - case R thJC
-
Thermal resistance, junction ambient, leaded
R thJA
-
SMD version, device on PCB
R thJA minimal footprint
-
6 cm2 cooling area5)
-
-
0.
5 K/W
-
62
-
62
-
40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D= 1 mA
75
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=250 µA
2.
1
3.
0
4.
0
Zero gate voltage drain current
I DSS
V DS=75 V, V GS=0 V, T j=25 °C
-
0.
01
1 µA
V DS=75 V, V GS=0 V, T j=125 °C2)
-
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
Drain-source on-state resistance
RDS(on) V GS=10 V, I D=80 A,
-
1
100
1
100 nA
5.
8
7.
4 mΩ
V GS=10 V, I D=80 A,
-
5.
5
7.
...
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