• 650 V @TJ = 150°C
• Max. RDS(on) = 380 mΩ
• Ultra low gate charge (typ. Qg = 30 nC)
• Low effective output capacitance (typ. Coss.eff = 95 pF)
• 100% avalanche tested Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of...
FCP380N60 PDF File
