DatasheetsPDF.com

GT60J323

Toshiba Semiconductor
Part Number GT60J323
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel IGBT
Published Jun 19, 2014
Detailed Description GT60J323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323 Current Resonance Inverter Switching...
Datasheet PDF File GT60J323 PDF File

GT60J323
GT60J323

Overview
GT60J323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323 Current Resonance Inverter Switching Application • • • • • • Enhancement mode type High speed : tf = 0.
16 μs (typ.
) (IC = 60A) Low saturation voltage: VCE (sat) = 1.
9 V (typ.
) (IC = 60A) FRD included between emitter and collector Fourth generation IGBT TO-3P(LH) (Toshiba package name) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Continuous collector current Pulsed collector current Diode forward current Collector power dissipation Junction temperature Storage temperature range DC Pulsed @ Tc = 100°C @ Tc = 25°C @ Tc = 100°C @ Tc = 25°C Symbol VC...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)