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G30N60B3

Fairchild Semiconductor

NPT IGBT - Fairchild Semiconductor

G30N60B3
G30N60B3

PDF File G30N60B3 PDF File


Description
HGTG30N60B3 Data Sheet November 2013 600 V, NPT IGBT The HGTG30N60B3 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter and power supplies.
Features • 30 A, 600 V, TC = 110°C • Low Saturation Voltage: VCE(sat) = 1.
45 V @ IC = 30 A • Typical Fall Time.
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90ns at TJ = 150°C • Short Circuit Rating • Low Conduction Loss Formerly Developmental Type TA49170.
Ordering Information PART NUMBER HGTG30N60B3 PACKAGE TO-247 BRAND G30N60B3 Packaging JEDEC STYLE TO-247 NOTE: When ordering, use the entire part number.
Symbol C G C E TO-247 G E ©2001 Fairchild Semiconductor Corporation 1 www.
fairchildsemi.
com HGTG30N60B3 Rev.
C1 http://www.
Datasheet4U.
com HGTG30N60B3 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Ratings Collector to Emitter Voltage .
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BVCES Collector Current Continuous At TC = 25oC .
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IC25 At TC = 110oC .
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IC110 Collector Current Pulsed (Note 1) .
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ICM Gate to Emitter Voltage Continuous.
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VGES Gate to Emitter Voltage Pulsed .
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VGEM Switching Safe Operating Area at TJ = 150oC (Figure 2) .
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SSOA Power Dissipation Total at TC = 25oC .
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