N-Channel MOSFET - Matsuki
Description
ME08N20/ME08N20-G
N- Channel 200V (D-S) MOSFET
GENERAL DESCRIPTION
The ME08N20 is the N-C hannel lo gic e nhancement mo de p ower field effect transistors ar e pr oduced using high cel l de nsity DMOS trench technology.
This high density process is especi ally tailored to minimize on-state resist ance.
These dev ices are p articularly su ited for lo w volt age appl ication su ch as LCD i nverter, compute r po wer management and DC to DC converter circu its which need low in-line power loss.
FEATURES
● RDS(ON)≦0.
4Ω@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability
APPLICATIONS
● Po wer Management ● DC/DC Converter ● LCD TV & Monitor Display inverter ● CCFL inverter ● Secon dary Synchronous Rectification
PIN CONFIGURA TION
(TO-252-3L) Top View
e Ordering Information: ME08N20 (Pb-free)
ME08N20-G (Green product-Halogen free)
Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted)
Parameter Sy
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current * Pulsed Drain Current Maximum Power Dissipation Operating Junction Temperature Thermal Resistance-Junction to Case*
2
mbol
VDS 200 VGS ±20 TC=25℃ TC=70℃ ID IDM 36 TC=25℃ TC=70℃ PD TJ RθJC 1.
67
Maximum Ratings
Unit
V V
9 7.
2
A A
74.
9 47.
9 -55 to 150
W ℃ ℃/W
* Notes: The device mounted on 1in FR4 board with 2 oz copper
http://www.
Datasheet4U.
com
Nov, 2012-Ver1.
6
01
ME08N20/ME08N20-G
N- Channel 200V (D-S) MOSFET
Electrical Characteristics (TC =25℃ Unless Otherwise Specified)
Symbol Parameter
STATIC V(BR)DSS VGS(th) Gate IGSS IDSS RDS(ON) VSD DYNAMIC Qg Total Gate Charge urce Charge Charge capacitance put Capacitance erse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-On Fall Time VDS=160V, VGS=10V, RG=4.
7Ω, RL=17.
7Ω VDS=25V, VGS=0V, f=1MHz VDD=160V, VGS=10V, ID=9A 51.
7 12.
7 16.
3 2610 68 21 26.
9 37.
2 ns 63.
5 43.
8 pF nc Drain-Source Breakdown Voltage Threshold Voltage VGS=0V, ID=250μA 200 V...
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