2SC5422 - Toshiba Semiconductor
Description
2SC5422
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5422
HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS
l High Voltage l Low Saturation Voltage l High Speed : VCBO = 1700 V : VCE (sat) = 3 V (Max.
) : tf = 0.
15 µs (Typ.
) Unit: mm
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC SYM Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC I Pulse BOL VCBO VCEO VEBO
C
RATING 1700 V 600 5 15 30 7.
5 A 200 150 ° −55~150 °
UNIT
V V A
ICP IB PC Tj Tstg
JEDEC JEITA
― ― 2-21F2A
W C C
TOSHIBA
Weight: 9.
75 g (typ.
)
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC S Collector Cut−off Current Emitter Cut−off Current Emitter−Base Breakdown Voltage DC Current Gain Collector−Emitter Saturation Voltage Base−Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Switching Time Storage Time Fall Time YMBOL ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob tstg tf TEST CONDITION VCB = 1700 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 2 A VCE = 5 V, IC = 11 A IC = 11 A, IB = 2.
75 A IC = 11 A, IB = 2.
75 A VCE = 10 V, IC = 0.
1 A VCB = 10 V, IE = 0, f = 1 MHz ICP = 8 A, IB1 (end) = 1.
4 A fH = 64 kHz MIN ― ― 600 10 4.
5 ― ― ― ― 220 ― ― 2.
5 0.
15 0.
TYP.
―1 ― 100 ― ― ― 8.
―3 1.
0 2 1.
5 ― ― pF 3.
5 3 µs ―V 40 5 ― V V MHz MAX UNIT mA µA
1
2001-08-20
http://www.
Datasheet4U.
com
2SC5422
2
2001-08-20
2SC5422
3
2001-08-20
2SC5422
4
2001-08-20
2SC5422
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general ca n malfunction or f ail du e t o t heir in herent electrical s ensitivity and vulnerability to physical stress.
It i s t he r esponsibility of th e buy er, w hen ut ilizing T OSHIBA produ cts, to comply with the stand...
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