Silicon PNP Triple Diffused Type Transistor - Toshiba
Description
2SB1682
TOSHIBA Transistor Silicon PNP Triple Diffused Type (Darlington power transistor)
2SB1682
○ Power Amplifier Applications ○ High-Power Switching Applications
• • High-breakdown voltage: VCEO = −160 V (min) Complementary to 2SD2636 Unit: mm
Maximum Ratings (Tc = 25°C)
Characteristic Sy Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC I Pulse I mbol VCBO VCEO VEBO
C CP
Rating −160 −160 −5 −8 −15 −1 100 W 150 −55 to 150
Unit V V V A A 1.
Base 2.
Collector(heatsink) 3.
Emitter
IB PC Tj Tstg
°C °C
JEDEC JEITA TOSHIBA 2
― ― -16C1A
Equivalent Circuit
Collector
Weight: 4.
7 g (typ.
)
Base
≈ 30 Ω
Emitter
Electrical Characteristics (Tc = 25°C)
Characteristic S Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Turn-on Time ymbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE fT ton
IB1
Test Conditions VCB = −160 V, IE = 0 VEB = −5 V, IC = 0 IC = −10 mA, IB = 0 VCE = −4 V, IC = −1 A VCE = −4 V, IC = −7 A IC = −7 A, IB = −7 mA VCE = −4 V, IC = −7 A VCE = −10 V, IC = −1 A
VCC IB1
Min ― ― −160 500 5000 ― ― ― 35
Typ.
― ― ― ― ―1 ― ―
Max −10 −10 ―V ― 5000 −3.
0 V −3.
0 V ― MH
Unit µA µA
z
IB2 Input
∼ −
50 V 7Ω Output
― 0.
7
―
Switching Time
Storage Time
tstg
20µs
― 1.
3
―
µs
IB1 = −IB2 = −7mA
IB2
Fall Time
tf
Duty Cycle < 1%
― 0.
7
―
1
2005-07-27
http://www.
Datasheet4U.
com
2SB1682
Marking
TOSHIBA
B1682
Part No.
(or abbreviation code) Lot No.
A line indicates lead (Pb)-free package or lead (Pb)-free finish.
2
2005-07-27
2SB1682
IC – VCE
−10 Common emitter Tc = 25°C Single non-repetitive pulse 100000
hFE – IC
I C (A)
−8
Collector current
−0.
5 −4 −0.
4 −0.
3
DC current gain
−6
−0.
6
hFE
−1.
0
−0.
8
10000
100 25
1000
Tc = −55°C
−2
100
Common emitter VCE = −4 V Sin...
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