N-Channel MOSFET - Toshiba
Description
Target Specification
TK80E08K3
)
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS
TK80E08K3
E-Bike/UPS/Inverter
Unit: mm Low drain−source ON resistance High forward transfer admittance Low leakage current Enhancement mode : RDS (ON) = 7.
5 mΩ (typ.
) : |Yfs| = 135 S (typ.
) : IDSS = 10 µA (max) (VDS = 75 V) : Vth = 2.
0~4.
0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics S Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) V Gate−source voltage DC (Note Drain current 1) ymbol VDSS 75
DGR 75
Rating
Unit V V V A A A W mJ A mJ
VGSS ±20 ID 80 ID 70 IDP 240 PD 200 2) EAS 107 IAR 40 EAR 20 dv/dt Tch 175 Tstg −55~175 12
DC (Note 1,4) Pulse (Note 1)
Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note Avalanche current Repetitive avalanche energy (Note 3) Peak diode recovery dv/dt (Note 5) Channel temperature (Note 4) Storage temperature range (Note 4)
JEDEC JEITA TOSHIBA
TO-220AB SC-46
V/ns °C °C
Weight: 1.
9 g (typ.
)
2 change in Note : Using continuously under heavy loads (e.
g.
the application of high temperat ure/current/voltage and the signif icant temperature, etc.
) may cause this product to decrease in the relia bility significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design t he appropriate reliabil ity upon re viewing the Tos hiba Semiconductor Reliability Handbook (“Han dling 1 Precautions”/“Derating Concept and Met hods”) and individual r eliability data (i.
e.
reliability test report and estimate d failure rate, etc).
Thermal Characteristics Characteristics S Thermal resistance, channel to case Thermal resistance, channel to ambient ymbol Rth (ch−c) Rth (ch−a) Max 0.
75 83.
3 Unit °C / W °C / W 3
Note 1: Ensure that the channel temperature does not exceed 175°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 100 µH, RG = 25 Ω, IAR = 40A Note 3: Repetitive rating: pulse width limited by maximum ...
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