Switchmode Series NPN Silicon Power Transistors - nELL
Description
SEMICONDUCTOR
MJE13005A(NPN)
RoHS RoHS
Nell High Power Products
Switchmode Series NPN Silicon Power Transistors (4A / 400V / 75W) FEATURES
VCEO(SUS) ≥ 400V @ lC = 10 mA, lB = 0 VCE(sat) = 1.
0V (Max.
) @ lC = 4 A, lB = 1 A Switching time - tf = 0.
9 µs (Max.
) @ lC = 2 A 700V blocking capability
1
2
3
TO-220AB (MJE13005A)
DESCRIPTION
T hese devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical.
They are particularly suited for 115 and 220V SWITCHMODE applications such as switching regulators, inverters, motor controls, solenoid/relay drivers and deflection circuits.
INTERNAL SCHEMATIC DIAGRAM
C (TAB)
(1) B (2) E
( NPN)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL VCEV V CEO V EBO
IC I CM
IB I BM
PARAMETER Collector to base voltage (V BE = 0) Collector to emitter voltage (I B = 0) Emitter to base voltage
C ollector current - continuous
VALUE 700 400 9
4
UNIT
V
Peak collector current (Note 1)
B ase current - continuous
8
2
A
Peak base current (Note 1) 4
IE I EM PD
Emitter current - continuous
Peak emitter current (Note 1)
6 12 T C = 25 °C 75 0.
6 150 ºC -65 to 150
26 5
Total power dissipation Derate above 25ºC Tj T stg
TL
W W/ºC
Junction temperature Storage temperature
Maximum lead temperature for soldering purposes: 1/16” from case for ≤ 10 seconds
ºC
Note: 1.
Pulse test : Pulse width = 5ms, duty cycle ≤ 10%
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SEMICONDUCTOR
MJE13005A( NPN )
RoHS RoHS
Nell High Power Products
THERMAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL Rth(j-c) Rth(j-a) PARAMETER Maximum thermal resistance, junction to case Maximum thermal resistance, junction to ambient VALUE 1.
67 ºC/W 62.
5.
UNIT
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL PARAMETER CONDITIONS MIN TYP MAX OFF CHARACTERISTICS V CE = 700V, V BE(off) = 1.
5V ICEV Collector cutoff current V CE = 700V, V BE(off) = 1.
5V, T ...
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