STGW40N120KD - STMicroelectronics
Description
STGW40N120KD STGWA40N120KD
40 A, 1200 V short circuit rugged IGBT with Ultrafast diode
Features
■ ■ ■ ■ ■
Low on-losses High current capability Low gate charge Short circuit withstand time 10 µs IGBT co-packaged with Ultrafast free-wheeling diode
1 2 3
Applications
■
TO-247
Motor control
Description
This high voltage and short-circuit rugged IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low ON-state behavior.
Figure 1.
Internal schematic diagram
Table 1.
Device summary
Markings GW40N120KD GWA40N120KD Package TO-247 TO-247 long leads Packaging Tube Tube
Order codes STGW40N120KD STGWA40N120KD
February 2012
Doc ID 15360 Rev 5
1/15
www.
st.
com
15
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Datasheet4U.
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Contents
STGW40N120KD, STGWA40N120KD
Contents
1 2 Electrical ratings .
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3 Electrical characteristics .
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1 Electrical characteristics (curves) .
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3 4 5
Test circuits
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Package mechanical data .
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10 Revision history .
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Doc ID 15360 Rev 5
STGW40N120KD, STGWA40N120KD
Electrical ratings
1
Electrical ratings
Table 2.
Symbol VCES IC IC
(1) (1)
Absolute maximum ratings
Parameter Collector-emitter voltage (VGE = 0) Continuous collector current at TC= 25 °C Continuous collector current at TC= 100 °C Turn-off latching current Pulsed collector current Gate-emitter voltage Short circuit withstand time, VCE = 0.
5 V(BR)CES Tj = 125 °C, RG = 10 Ω, VGE = 12 V Total dissipation at TC = 25 °C Diode RMS forward current at TC = 25 °C Surge non repetitive forward current tp = 10 ms sinusoidal Operating junction temperature Value 1200 80 40 8...
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