N-Channel MOS Type Field Effect Transistor - Toshiba Semiconductor
Description
2SK2719
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII)
2SK2719
Chopper Regulator, DC-DC Converter and Motor Drive Applications
• • • • Low drain-source ON resistance: RDS (ON) = 3.
7 Ω (typ.
) High forward transfer admittance: |Yfs| = 2.
6 S (typ.
) Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics S Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) V Gate-source voltage DC Drain current (Note 1) Pulse (Note 1) ymbol VDSS
DGR
Rating 900 900 ±30 3
Unit V V V
1.
Gate 2.
Drain (heat sink) 3.
Source
VGSS ID IDP PD EAS IAR (Note 3) EAR Tch Tstg
A 9 125 295 3 12.
5 150 −55 to 150 W mJ A mJ °C °C
JEDEC JEITA TOSHIBA
― SC-65 2-16C1B
Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy Channel temperature Storage temperature range
Weight: 4.
6 g (typ.
)
Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in
temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics S Thermal resistance, channel to case Thermal resistance, channel to ambient ymbol Rth (ch-c) Rth (ch-a) 50.
0 Max 1.
0 Unit °C/W °C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 58 μH, RG = 25 Ω, IAR = 45 A Note 3: Repetitive rating: pulse width limited by maximum junction temperature This transistor is an ele...
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