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GFP50N06

Chinahaiso electronic
Part Number GFP50N06
Manufacturer Chinahaiso electronic
Description MOSFET
Published May 26, 2014
Detailed Description Chinahaiso electronic Co.Ltd http://www.chinahaiso.com MOSFET GFP 50N06 GFP 50N06 FEATURES () Low RD s (on) (0.023 Ω)@...
Datasheet PDF File GFP50N06 PDF File

GFP50N06
GFP50N06

Overview
Chinahaiso electronic Co.
Ltd http://www.
chinahaiso.
com MOSFET GFP 50N06 GFP 50N06 FEATURES () Low RD s (on) (0.
023 Ω)@Vgs=10V Low Gate Charge (Typical 39 nC) Low Crss (typical 110 pF) Maximum Junction Temperature range (175 ℃) Absolute maximum ratings Characteristics T=25℃ unless otherwise noted Symbol BV DSS ID V GS E AS PD T STG Rθ JC V SD Value 60 50 ±20 470 130 -55 –175 1.
15 1.
4 Units V A V mJ W ℃ ℃/W V Drain-SourceVoltage Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Power Dissipation Operating and Storage Temperature Range Thermal Resistance ,Junction-to Case Drain-source Diode Forward Voltage 1 of 2 http://www.
Datasheet4U.
com Chinahaiso electronic Co.
Ltd ...


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