UNISONIC TECHNOLOGIES CO., LTD 5N65Z Preliminary Power MOSFET 5A, 650V N-CHANNEL POWER MOSFET DE SCRIPTION The UTC 5N65Z is a high voltage po wer MOSFET designed to have better characteristics, such as f ast s witching time, lo w gate charge, low on-state resistance and high rugged avalanche cha.
logies Co., Ltd 1 of 6 QW-R502-910.a http://www.Datasheet4U.com 5N65Z Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±20 V Avalanche Current (Note 2) IAR 5 A Continuous Drain Current ID 5 A Pulsed Drain Current (Note 2) IDM 20 A Single Pulsed (Note 3) EAS 210 Avalanche Energy mJ Repetitive (Note 2) EAR 10 Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation PD 36 W Junction Temperature TJ + 150 °C Operation Temperature TOPR -55 ~ +150 °C Stora.
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