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CGHV27030S

Part Number	CGHV27030S
Manufacturer	CREE
Description	GaN HEMT
Published	May 17, 2014
Detailed Description	CGHV27030S 30 W, DC - 6.0 GHz, GaN HEMT The CGHV27030S is an unmatched, gallium nitride (GaN) high electron mobility t...
Datasheet	CGHV27030S PDF File

Overview

CGHV27030S 30 W, DC - 6.
0 GHz, GaN HEMT The CGHV27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) which offers high efficiency, high gain and wide bandwidth capabilities.
The CGHV27030S GaN HEMT devicesare ideal for telecommunications applications with frequencies of 700-960 MHz, 1200-1400 MHz, 1800-2200 MHz, 2500-2700 MHz, and 3300-3700 MHz at both 50 V CGHV27030S is also ideal for tactical communications and 28 V operations.
applications operating The from 20-25P0a0ckaPgNe :TyCpGeH:V32x740D30FSN MHz, including land mobile radios.
Additional applications include L-Band RADAR and S-Band RADAR.
The CGHV27030S can operate with either a 50 V or 28 ...

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