2SK3056 - NEC
Description
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3056
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
ORDERING INFORMATION
PART NUMBER 2SK3056 2SK3056-S 2SK3056-ZJ PACKAGE TO-220AB TO-262 TO-263
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES
• Low On-State Resistance RDS(on)1 = 34 mΩ MAX.
(VGS = 10 V, ID = 16 A) RDS(on)2 = 50 mΩ MAX.
(VGS = 4.
0 V, ID = 16 A) • Low Ciss : Ciss = 920 pF TYP.
• Built-in Gate Protection Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage (V GS = 0 V) Gate to Source Voltage (V DS = 0 V) Gate to Source Voltage (V DS = 0 V) Drain Current (DC) Drain Current (Pulse)
Note1
VDSS VGSS(AC) VGSS(DC) ID(DC) ID(pulse) PT PT Tch Tstg
60 ±20 +20, −10 ±32 ±100 34 1.
5 150 –55 to +150 16 25.
6
V V V A A W W °C °C A mJ
Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2
IAS EAS
Notes 1.
PW ≤ 10 µs, Duty cycle ≤ 1 % 2.
Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V
THERMAL RESISTANCE
Channel to Case Channel to Ambient Rth(ch-C) Rth(ch-A) 3.
68 83.
3 °C/W °C/W
The information in this document is subject to change without notice.
Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country.
Please check with local NEC representative for availability and additional information.
Document No.
D13095EJ1V0DS00 (1st edition) Date Published March 1999 NS CP(K) Printed in Japan
©
1998,1999
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2SK3056
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Ga...
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