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KF10N60P

KEC
Part Number KF10N60P
Manufacturer KEC
Description N CHANNEL MOS FIELD EFFECT TRANSISTOR
Published May 8, 2014
Detailed Description SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast swit...
Datasheet PDF File KF10N60P PDF File

KF10N60P
KF10N60P

Overview
SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for active power factor correction and switching mode power supplies.
FEATURES VDSS=600V, ID=10A Drain-Source ON Resistance : RDS(ON)(Max)=0.
69 Qg(typ.
)= 29.
5nC @VGS=10V D N N A KF10N60P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR KF10N60P O C F E G B Q I K M L J H P DIM MILLIMETERS _ 0.
2 9.
9 + A B C D E F G H I J K L M N 15.
95 MAX 1.
3+0.
1/-0.
05 _ 0.
1 0.
8 + _ 0.
2 3.
6 + _ 0.
1 2.
8 + 3.
7 0.
5+0.
1/-0.
05 1.
5 _ 0.
3 13.
08 + 1.
46 _ 0.
1 1.
4 + _ 0.
1 1.
27 + _ 0.
2 2.
54 + _ 0.
2 4.
5 + _ 0.
2 2.
4 + _ 0.
2 9.
2 + MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate ...


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