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SCTMU001F

ROHM
Part Number SCTMU001F
Manufacturer ROHM
Description N-channel SiC power MOSFET
Published May 8, 2014
Detailed Description SCTMU001F N-channel SiC power MOSFET Outline Datasheet VDSS RDS(on) (Typ.) ID PD Features 1) Low on-resistance 2) Fa...
Datasheet PDF File SCTMU001F PDF File

SCTMU001F
SCTMU001F


Overview
SCTMU001F N-channel SiC power MOSFET Outline Datasheet VDSS RDS(on) (Typ.
) ID PD Features 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive 400V 120m 20A 132W TO220AB Inner circuit (2) *1 (1) (1) Gate (2) Drain (3) Source *1 Body Diode (3) 6) Pb-free lead plating ; RoHS compliant Packaging specifications Packing Tube 50 SCTMU001F Application ・Audio Type Reel size (mm) Tape width (mm) Basic ordering unit (pcs) Taping code Marking Absolute maximum ratings (Ta = 25C) Parameter Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Power dissipation (Tc = 25C) Junction temperature Range of storage temperature Tc = 25C Symbol VDSS ID *1 ID,pulse *2 VGSS PD Tj Tstg Value 400 20 60 -6 to 22 132 150 -55 to 150 Unit V A A V W C C www.
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12 - Rev.
A SCTMU001F Thermal resistance Values Par...



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