DatasheetsPDF.com

SCT2120AF

Part Number	SCT2120AF
Manufacturer	ROHM
Description	N-channel SiC power MOSFET
Published	May 8, 2014
Detailed Description	SCT2120AF N-channel SiC power MOSFET Datasheet VDSS RDS(on) (Typ.) ID PD 650V 120m 29A 165W Features 1) Low on-res...
Datasheet	SCT2120AF PDF File

Overview

SCT2120AF N-channel SiC power MOSFET Datasheet VDSS RDS(on) (Typ.
) ID PD 650V 120m 29A 165W Features 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive 6) Pb-free lead plating ; RoHS compliant Application ・Solar inverters ・DC/DC converters ・Switch mode power supplies ・Induction heating ・Motor drives Outline TO220AB Inner circuit (1) (2) (3) (2) (1) Gate (2) Drain *1 (3) Source (1) *1 Body Diode (3) Packaging specifications Packing Tube Reel size (mm) - Tape width (mm) Type Basic ordering unit (pcs) 50 Packing code C Marking SCT2120AF Absolute maximum ratings (Ta = 25C) Parameter Drain - Source voltage Continuous drain current Pulsed drain current Tc = 25C Tc = 100C Gate - Source voltage (DC) Gate - Source surge voltage (Tsurge ˂ 300nsec) Power dissipation (Tc = 25C) Junction temperature Range of storage temperature Symbol VDSS ID *1 ID *1 ID,pulse *2 VGSS VGSS-surge*3 PD Tj Tstg Value 650 29 20 72 6 to 22 10 to 26 165 175 55 to 175 Unit V A A A V V W C C www.
rohm.
com © 2013 ROHM Co.
, Ltd.
All rights reserved.
1/12 2017.
07 - Rev.
E SCT2120AF Thermal resistance Parameter Thermal resistance, junction - case Soldering temperature, wavesoldering for 10s Datasheet Symbol RthJC Tsold Values Min.
Typ.
Max.
Unit - 0.
70 0.
91 C/W - - 265 C Electrical characteristics (Ta = 25C) Parameter Symbol Conditions Drain - Source breakdown voltage Zero gate voltage drain current Gate - Source leakage current Gate - Source leakage current Gate threshold voltage V(BR)DSS VGS = 0V, ID = 1mA IDSS IGSS+ IGSSVGS (th) VDS = 650V, VGS = 0V Tj = 25C Tj = 150°C VGS = 22V, VDS = 0V VGS = 6V, VDS = 0V VDS = VGS, ID = 3.
3mA Values Min.
Typ.
Max.
650 - - - 1 10 -2- - 100 - - -100 1.
6 2.
8 4.
0 Unit V A nA nA V *1 Limited only by maximum temperature allowed.
*2 PW  10s, Duty cycle  1% *3 Example of acceptable Vgs waveform *4 Pulsed www.
rohm.
com © 2013 ROHM Co.
,...

Similar Datasheet

SCT2120AF N-channel SiC power MOSFET - ROHM

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)