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2SB817C

Part Number	2SB817C
Manufacturer	ON Semiconductor
Description	Bipolar Transistor
Published	May 5, 2014
Detailed Description	Ordering number : ENA0188B 2SB817C Bipolar Transistor –140V, –12A, Low VCE(sat) PNP TO-3P-3L http://onsemi.com Feature...
Datasheet	2SB817C PDF File

Overview

Ordering number : ENA0188B 2SB817C Bipolar Transistor –140V, –12A, Low VCE(sat) PNP TO-3P-3L http://onsemi.
com Features • Large current capacitance • Wide SOA and high durability against breakdown • Adoption of MBIT process Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (Pulse) VCBO VCEO VEBO IC ICP Collector Dissipation PC Junction Temperature Storage Temperature Tj Tstg Tc=25°C Conditions Ratings -160 -140 --6 --12 --20 2.
5 120 150 --55 to +150 Unit V V V A A W W °C °C Stresses exceeding Maximum Ratings may damage the device.
Maximum Rating...

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