STP4NK80ZFP - STMicroelectronics
Description
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STP4NK80Z - STP4NK80ZFP STD4NK80Z - STD4NK80Z-1
N-channel 800V - 3Ω - 3A - TO-220/TO-220FP/DPAK/IPAK Zener - Protected SuperMESH™ MOSFET
General features
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Type
VDSS (@Tjmax) 800 V 800 V 800 V 800 V
RDS(on) < 3.
5 Ω < 3.
5 Ω < 3.
5 Ω < 3.
5 Ω
ID 3A 3A 3A 3A
3 1
1 3 2
3 1 2
STP4NK80Z STP4NK80ZFP STD4NK80Z STD4NK80Z-1
■ ■ ■ ■ ■
TO-220
TO-220FP
Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatibility
DPAK
IPAK
Internal schematic diagram
Description
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout.
In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.
Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
Applications
■
Switching application
Order codes
Part number STP4NK80Z STP4NK80ZFP STD4NK80ZT4 STD4NK80Z-1 Marking P4NK80Z P4NK80ZFP D4NK80Z D4NK80Z Package TO-220 TO-220FP DPAK IPAK Packaging Tube Tube Tape & reel Tube
August 2006
Rev 8
1/18
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com 18
Contents
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STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1
Contents
1
Electrical ratings .
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1 Protection features of gate-to-source zener diodes .
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2
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Electrical characteristics .
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1 Electrical characteristics (curves) .
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7
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Test circuit
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10
Package mechanical data .
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11 Packaging mechanical data .
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