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C3279

Toshiba Semiconductor
Part Number C3279
Manufacturer Toshiba Semiconductor
Description 2SC3279
Published May 5, 2014
Detailed Description 2SC3279 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3279 Strobe Flash Applications Medium Power Ampl...
Datasheet PDF File C3279 PDF File

C3279
C3279

Overview
2SC3279 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3279 Strobe Flash Applications Medium Power Amplifier Applications · High DC current gain and excellent hFE linearity : hFE (1) = 140~600 (VCE = 1 V, IC = 0.
5 A) : hFE (2) = 70 (min), 200 (typ.
) (VCE = 1 V, IC = 2 A) · Low saturation voltage: VCE (sat) = 0.
5 V (max) (IC = 2 A, IB = 50 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage DC Collector current Pulsed (Note 1) Base current Collector power dissipation Junction temperature Storage temperature range ICP IB PC Tj Tstg 5 0.
2 750 150 -55~150 A mW °C °C Symbol VCBO VCES VCEO VEBO IC Rating 3...


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