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SI2305

HT Semi
Part Number SI2305
Manufacturer HT Semi
Description 20V P-Channel MOSFET
Published May 5, 2014
Detailed Description SI2305 20V P-Channel Enhancement Mode MOSFET VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.8A RDS(ON), Vgs@-2.5V, Ids@-2.0A 130...
Datasheet PDF File SI2305 PDF File

SI2305
SI2305

Overview
SI2305 20V P-Channel Enhancement Mode MOSFET VDS= -20V RDS(ON), Vgs@-4.
5V, Ids@-2.
8A RDS(ON), Vgs@-2.
5V, Ids@-2.
0A 130mΩ 190mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D G S SOT-23(PACKAGE) REF.
A B C D E F Millimeter Min.
Max.
2.
70 3.
10 2.
40 2.
80 1.
40 1.
60 0.
35 0.
50 0 0.
10 0.
45 0.
55 REF.
G H K J L M Millimeter Min.
Max.
1.
90 REF.
1.
00 1.
30 0.
10 0.
20 0.
40 0.
85 1.
15 0° 10° Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1) Symbol Limit Unit VDS VGS ID IDM 2) -20 ±8 -2.
2 -8 1.
25 0.
8 -55 to 150 100 166 o V A TA = 25o TA = 75oC 2) Maximum Power Dissipation PD TJ, Tstg RthJA W o Operating Junction and Storage Temperature Range Junction-to-Ambient Thermal Resistance (PCB mounted) C Junction-to-Ambient Thermal Resistance (PCB mounted) 3) C/W Notes 1) Pulse width limited by maximum junction temperature.
2) Surface Mounted on FR4 Board, t v 5 sec.
3) Surface Mounted on FR4 Board.
1 JinYu semiconductor www.
htsemi.
com Date:2011/05 http://www.
Datasheet4U.
com SI2305 20V P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current 0 Gate Body Leakage Forward Transconductance Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Max.
Diode Forward Current Diode Forward Voltage 1) 1) 1) Symbol Test Condition Min.
Typ.
Max.
Unit BVDSS R DS(on) VGS(th) IDSS IGSS gfs VGS = 0V, ID = -250uA VGS = -4.
5V, ID = -2.
8A VGS = -2.
5V, ID = -2.
0A VDS =VGS, ID = -250uA VDS = -20V, V GS = 0V VDS = -20V, V GS = 0V TJ=55 VGS = ± 8V, VDS = 0V VDS = -5V, ID = -...


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