DatasheetsPDF.com

TPC8026

Toshiba
Part Number TPC8026
Manufacturer Toshiba
Description N-Channel MOSFET
Published Apr 22, 2014
Detailed Description TPC8026 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8026 Lithium Ion Battery Applications ...
Datasheet PDF File TPC8026 PDF File

TPC8026
TPC8026

Overview
...Portable Equipment Applications Notebook PC Applications • • • • • Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 5.
1 mΩ (typ.
) High forward transfer admittance: |Yfs| = 30 S (typ.
) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.
3 to 2.
5 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) Channel temper...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)