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2PG011

Panasonic
Part Number 2PG011
Manufacturer Panasonic
Description Silicon N-Channel Enhancement IGBT
Published Apr 22, 2014
Detailed Description This product complies with the RoHS Directive (EU 2002/95/EC). IGBT 2PG011 Silicon N-channel enhancement IGBT For plas...
Datasheet PDF File 2PG011 PDF File

2PG011
2PG011

Overview
This product complies with the RoHS Directive (EU 2002/95/EC).
IGBT 2PG011 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits  Features  Low collector-emitter saturation voltage: VCE(sat) < 2.
5 V  High-speed switching: tf = 185 ns (typ.
)  Package  Code TO-220D-A1  Pin Name 1.
Gate 2.
Collector 3.
Emitter Collector-emitter voltage (E-B short) Gate-emitter voltage (E-B short) Collector current Peak collector current * Power dissipation VCES IC VGES ICP PC Tj Ta = 25°C Junction temperature Storage temperature Tstg Note) *: Assurance of repetitive pulse.
(Repetitive period ≤ 5 ms on-duty ≤ 20%) But, it must stay within 40% of all...


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