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HY1906P

HOOYI
Part Number HY1906P
Manufacturer HOOYI
Description N-Channel Enhancement Mode MOSFET
Published Apr 22, 2014
Detailed Description HY1906P N-Channel Enhancement Mode MOSFET Features • • • • 65V/130A RDS(ON) = 7.5 mΩ (typ.) @ VGS=10V Pin Description ...
Datasheet PDF File HY1906P PDF File

HY1906P
HY1906P

Overview
HY1906P N-Channel Enhancement Mode MOSFET Features • • • • 65V/130A RDS(ON) = 7.
5 mΩ (typ.
) @ VGS=10V Pin Description 100% avalanche tested G Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) D S D Applications G • • Switching application Power Management for Inverter Systems.
S N-Channel MOSFET Ordering and Marking Information Package Code P HY1906 G ÿ YYWWJ P : TO220-3L Date Code YYWW Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS.
HOOYI lead-free products meet or exceed the lead-free requirements of...


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