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IRG7PH44K10DPBF

Part Number	IRG7PH44K10DPBF
Manufacturer	International Rectifier
Description	INSULATED GATE BIPOLAR TRANSISTOR
Published	Mar 31, 2014
Detailed Description	IRG7PH44K10DPbF IRG7PH44K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V I...
Datasheet	IRG7PH44K10DPBF PDF File

Overview

IRG7PH44K10DPbF IRG7PH44K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V IC = 40A, TC =100°C tSC 10µs, TJ(max) = 150°C VCE(ON) typ.
= 1.
9V @ IC = 25A G E C G G n-channel Applications • Industrial Motor Drive • UPS G Gate G IRG7PH44K10DPbF TO‐247AC C Collector C E C E G IRG7PH44K10D‐EPbF TO‐247AD E Emitter Features Low VCE(ON) and switching losses 10µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 150°C Positive VCE (ON) Temperature Coefficient Base part number IRG7PH44K10DPBF IRG7PH44K10D-EPBF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C VGE PD @ ...

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IRG7PH44K10DPBF INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

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