DatasheetsPDF.com

K2601

Toshiba Semiconductor
Part Number K2601
Manufacturer Toshiba Semiconductor
Description 2SK2601
Published Mar 27, 2014
Detailed Description 2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2601 DC−DC Converter, Relay Drive and Mo...
Datasheet PDF File K2601 PDF File

K2601
K2601

Overview
2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2601 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON-resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 0.
56 Ω (typ.
) : |Yfs| = 7.
0 S (typ.
) Unit: mm : IDSS = 100 μA (max) (VDS = 500 V) : Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 10 40 125 270 10 12.
5 150 −55 to 150 Unit V V V A A W mJ A mJ °C °C 1.
GATE 2.
DR...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)