2SK2004-01L - Fuji Electric
Description
2SK2004-01L,S
FAP-IIA Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof
N-channel MOS-FET
1000V
3,6Ω
4A
80W
> Outline Drawing
> Applications
Switching Regulators UPS DC-DC converters General Purpose Power Amplifier
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item Drain-Source-Voltage Drain-Gate-Voltage (RGS=20KΩ) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max.
Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 1000 1000 4 16 ±30 80 150 -55 ~ +150 Unit V V A A V W °C °C
> Equivalent Circuit
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Continous Reverse Drain Current Pulsed Reverse Drain Current Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol V (BR)DSS V GS(th) I DSS I R g C C C t t t t I I I V t Q
GSS DS(on) fs iss oss rss d(on) r d(off) f AV DR DRM SD rr rr
Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=1000V Tch=25°C VGS=0V Tch=125°C VGS=±30V VDS=0V ID=2A VGS=10V ID=2A VDS=25V VDS=25V VGS=0V f=1MHz VCC=600V ID=4A VGS=10V RGS=10 Ω Tch=25°C L = 100µH
Min.
1000 2,5
Typ.
3,0 10 0,2 10 2,7 5 1300 100 35 20 15 85 20
Max.
3,5 500 1,0 100 3,6 1950 150 55 30 25 130 30 4 16 1,65
2
4
IF=2xIDR VGS=0V Tch=25°C IF=IDR VGS=0V -dIF/dt=100A/µs Tch=25°C
1,1 400 3
Unit V V µA mA nA Ω S pF pF pF ns ns ns ns A A A V ns µC
- Thermal Characteristics Item Thermal Resistance
Symbol R th(ch-a) R th(ch-c)
Test conditions channel to air channel to case...
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