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WFD830

Winsemi
Part Number WFD830
Manufacturer Winsemi
Description Silicon N-Channel MOSFET
Published Mar 14, 2014
Detailed Description Free Datasheet http://www.nDatasheet.com D830 WF WFD Silicon N-Channel MOSFET Features ■ 4.5A,500V,RDS(on)(Max 1.5Ω)@VG...
Datasheet PDF File WFD830 PDF File

WFD830
WFD830

Overview
Free Datasheet http://www.
nDatasheet.
com D830 WF WFD Silicon N-Channel MOSFET Features ■ 4.
5A,500V,RDS(on)(Max 1.
5Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 32nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi ’s advanced planar stripe, DMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast.
Absolute...


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