DatasheetsPDF.com

HM6N70F

H&M Semiconductor
Part Number HM6N70F
Manufacturer H&M Semiconductor
Description silicon N-channel Enhanced VDMOSFETs
Published Mar 10, 2014
Detailed Description HM6N70/F General Description： HM6N70/F,the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar ...
Datasheet PDF File HM6N70F PDF File

HM6N70F
HM6N70F

Overview
HM6N70/F General Description： HM6N70/F,the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package form is TO-220, TO-220Fwhich accords with the RoHS standard.
VDSS ID PD(TC=25℃ ) RDS(ON)Typ 700 6 85 1.
8 V A W Ω Features： l Fast Switching l Low ON Resistance(Rdson≤2.
2Ω) l Low Gate Charge (Typical Data:18.
6nC) TO-220) G D S TO-220 G D S l Low Reverse transfer capacitances(Typical:6.
6pF) l 100% Single Pulse avalanche ...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)