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HM6N70

Part Number	HM6N70
Manufacturer	H&M Semiconductor
Description	silicon N-channel Enhanced VDMOSFETs
Published	Mar 10, 2014
Detailed Description	HM6N70/F General Description： HM6N70/F,the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar ...
Datasheet	HM6N70 PDF File

Overview

HM6N70/F General Description： HM6N70/F,the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package form is TO-220, TO-220Fwhich accords with the RoHS standard.
VDSS ID PD(TC=25℃ ) RDS(ON)Typ 700 6 85 1.
8 V A W Ω Features： l Fast Switching l Low ON Resistance(Rdson≤2.
2Ω) l Low Gate Charge (Typical Data:18.
6nC) TO-220) G D S TO-220 G D S l Low Reverse transfer capacitances(Typical:6.
6pF) l 100% Single Pulse avalanche ...

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