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IPU090N03LG

Infineon
Part Number IPU090N03LG
Manufacturer Infineon
Description Power-Transistor
Published Feb 27, 2014
Detailed Description Type IPD090N03L G IPS090N03L G IPF090N03L G IPU090N03L G OptiMOS®3 Power-Transistor Features • Fast switching MOSFET ...
Datasheet PDF File IPU090N03LG PDF File

IPU090N03LG
IPU090N03LG

Overview
Type IPD090N03L G IPS090N03L G IPF090N03L G IPU090N03L G OptiMOS®3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Avalanche rated • Pb-free plating; RoHS compliant IPD090N03L G Type • Avalanche rated • Pb-free plating; RoHS compliant IPF090N03L G 1) Product Summary V DS R DS(on),max ID 30 9 40 V mΩ A IPS090N03L G IPU090N03L G Package Marking PG-TO252-3-11 090N03L PG-TO252-3-23 090N03L PG-TO251-3-11 090N03L PG-TO251-3-21 090N03L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=4.
5 V, T C=25 °C V GS=4.
5 V, T C=100 °C Pulsed drain current2) Avalanche current, single pulse 3) Avalanche energy, single pulse Reverse diode d v /dt Gate source voltage 1) Value 40 37 40 30 280 40 40 6 ±20 Unit A I D,pulse I AS E AS dv /dt V GS T C=25 °C T C=25 °C I D=12 A, R GS=25 Ω I D=40 A, V DS=24 V, di /dt =200 A/µs, T j,max=175 °C mJ kV/µs V J-STD20 and JESD22 Rev.
1.
0 page 1 2006-10-23 Free Datasheet http://www.
datasheet-pdf.
com/ IPD090N03L G IPS090N03L G Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 Symbol Conditions P tot T j, T stg T C=25 °C Value 42 IPF090N03L G IPU090N03L G Unit W °C -55 .
.
.
175 55/175/56 Parameter Symbol Conditions min.
Values typ.
max.
Unit Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm² cooling area 4) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=1 mA V GS(th) V DS=V GS, I D=250 µA V DS=30 V, V GS=...


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