2SB1116 - NEC
Description
DATA SHEET
SILICON TRANSISTORS
2SB1116, 1116A
PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
FEATURES • Low VCE(sat)
VCE(sat) = −0.
20 V TYP.
(IC = −1.
0 A, IB = −50 mA) • High PT in small dimension with general-purpose
PT = 0.
75 W, VCEO = −50/−60 V, IC(DC) = −1.
0 A • Complementary transistor with 2SD1616 and 1616A
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Total power dissipation Junction temperature Storage temperature
Symbol
VCBO VCEO VEBO IC(DC) IC(pulse)* PT
Tj Tstg
Ratings 2SB1116 2SB1116A
−60 −80 −50 −60
−6.
0 −1.
0 −2.
0 0.
75 150 −55 to +150
* PW ≤ 10 ms, duty cycle ≤ 50%
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Unit
V V V A A W °C °C
Parameter
Symbol
Conditions
Collector cutoff current Emitter cutoff current DC current gain DC current gain DC base voltage Collector saturation voltage Base saturation voltage Output capacitance Gain bandwidth product Turn-on time Storage temperature Fall time
ICBO IEBO hFE1 ** hFE2 ** VBE ** VCE(sat) ** VBE(sat) ** Cob fT ton tstg
tf
VCB = −60 V, IE = 0 VEB = −6.
0 V, IC = 0 VCE = −2.
0 V, IC = −100 mA VCE = −2.
0 V, IC = −1.
0 A VCE = −2.
0 V, IC = −50 mA IC = −1.
0 A, IB = −50 mA IC = −1.
0 A, IB = −50 mA VCB = −10 V, IE = 0, f = 1.
0 MHz VCE = −2.
0 V, IC = −100 mA VCC = −10 V, IC = −100 mA IB1 = −IB2 = −10 mA, VBE(off) = 2 to 3 V
** Pulse test PW ≤ 350 µs, duty cycle ≤ 2%
PACKAGE DRAWING (UNIT: mm)
2SB1116, 1116A
MIN.
135 81 −600
70
TYP.
MAX.
−100 −100 600/400
−650 −0.
20 −0.
9
25 120 0.
07 0.
70 0.
07
−700 −0.
3 −1.
2
Unit nA nA
mV V V pF MHz µs µs µs
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