MOSFET - Chinahaiso
Description
Chinahaiso electronic Co.
Ltd
http://www.
chinahaiso.
com
MOSFET GFP 740
GFP 740
General description These N-channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested and guranteed to withstand a specified level of energy in the breakdown avalanche mode of operation All of these power MOSFETs are designed for applications such as switching convertors relay drivers.
These types can be operated directly from integrated circuits.
Absolute maximum ratings Characteristics
T=25℃ unless otherwise noted Symbol
BV DSS ID V GS E AS PD T STG Rθ JC V SD
Value
400 10 ±20 520 125 -55 –150 1.
.
67 1.
4
Units
V A V mJ W ℃ ℃/W V
Drain-SourceVoltage Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Power Dissipation Operating and Storage Temperature Range Thermal Resistance ,Junction-to Case Drain-source Diode Forward Voltage
1 of 2
Free Datasheet http://www.
datasheet-pdf.
co
Chinahaiso electronic Co.
Ltd
http://www.
chinahaiso.
com
MOSFET GFP 740
Parameter
Gate threshold voltage Gate-Body leakage Current Zero Gate voltage Drain current Static drain-source on-resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Total Gate charge Gate-source charge Gate-drain charge
Symbol
V GS (th) I GSS I DSS R DS (on) C iss C oss C rss td (on) tr td (off) tf Qg Q gs Q gd
Min
2.
0 -
Typ.
0.
47 1250 300 80 15 25 52 25 41 6.
5 23
Max
4.
0 ±100 10 0.
55 21 41 75 36 63 -
Units
V nA µA Ω pF
Test conditions
V DS =V GS I D =250µA V GS =±20V, V DS =0V V DS =400V, V GS =0V V GS =10V , I D =5A V GS =0V,V DS =25V, F=1.
0MHZ V DD =200V,I D =10A, R G =9.
1Ω R L =35Ω V GS =10V V DS =320V,V GS =10V, I D =10A,
ns
nC
2
of
2
Free Datasheet http://www.
datasheet-pdf.
com/
...
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