NPN EPITAXIAL SILICON RF TRANSISTOR - CEL
Description
DATA SHEET
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD (18)
NE68518 / 2SC5015
NPN SILICON RF TRANSISTOR
FEATURES
• High fT: fT = 12 GHz TYP.
@ VCE = 3 V, IC = 10 mA, f = 2 GHz • Low voltage operation • Low noise and high gain
• 4-pin super minimold (18) package
ORDERING INFORMATION
Part Number 2SC5015 2SC5015-T1 Quantity 50 pcs (Non reel) 3 kpcs/reel Supplying Form • 8 mm wide embossed taping • Pin 3 (Base), Pin 4 (Emitter) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Ratings 9 6 2 30 150 150 −65 to +150 Unit V V V mA mW °C °C
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice.
Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country.
Please check with local NEC Compound Semiconductor Devices representative for availability and additional information.
Document No.
PU10403EJ01V0DS (1st edition) (Previous No.
P10394EJ2V0DS00) Date Published June 2003 CP(K)
The mark
shows major revised points.
Free Datasheet http://www.
datasheet-pdf.
com/
NE68518 / 2SC5015
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter DC Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain RF Characteristics Gain Bandwidth Product Insertion Power Gain Noise Figure Reverse Transfer Capacitance fT ⏐S21e⏐ NF Cre
Note 2 2
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
ICBO IEBO hFE
Note 1
VCB = 5 V, IE = 0 mA VEB = 1 V, IC = 0 mA VCE = 3 V, IC = 10 mA
− − 75
− − −
0.
1 0...
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